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ZX5T2E6TC PDF预览

ZX5T2E6TC

更新时间: 2024-11-26 07:42:39
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
6页 105K
描述
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6

ZX5T2E6TC 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.36最大集电极电流 (IC):3.5 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):110 MHzBase Number Matches:1

ZX5T2E6TC 数据手册

 浏览型号ZX5T2E6TC的Datasheet PDF文件第2页浏览型号ZX5T2E6TC的Datasheet PDF文件第3页浏览型号ZX5T2E6TC的Datasheet PDF文件第4页浏览型号ZX5T2E6TC的Datasheet PDF文件第5页浏览型号ZX5T2E6TC的Datasheet PDF文件第6页 
ZX5T2E6  
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6  
SUMMARY  
BV = -20V : R  
= 31m ; I = -3.5A  
CEO  
SAT  
C
DESCRIPTION  
Pa c ka ge d in t he S OT2 3 -6 out line t his ne w 5 t h  
generation low saturation 20V PNP transistor offers  
extremely low on state losses making it ideal for use in  
DC-DC c irc uit s a nd va rious driving a nd pow e r  
management functions.  
FEATURES  
SOT23-6  
3.5 Amps continuous current  
Extremely low saturation voltage (-70mV max @ 1A/100mA )  
Up to 10 Amps peak current  
Very low saturation voltages  
APPLICATIONS  
DC - DC converters  
Battery charging  
Power switches  
Motor control  
Power management functions  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
QUANTITY PER REEL  
TAPE WIDTH  
7 ”  
8mm embossed  
8mm embossed  
3,000  
ZX5 T2 E6 TA  
ZX5 T2 E6 TC  
1 3 ”  
10,000  
DEVICE MARKING  
52  
TOP VIEW  
ISSUE 1 - MAY 2004  
S E M IC O N D U C T O R S  
1

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