Datasheet > ZW7100-200

ZW7100-200

更新时间： 2024-03-03 10:10:36

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	185K
描述
W1

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数据手册

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ZW7100-200 数据手册

ZW7100-WELDING DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

200-400V_RRM

****************************************************************************************************************************************

WELDING DIODE

Features:

. All diffused structure

. High current density

. Very low forward voltage drop

. Ceramic housing hermetic package

. Ultra-low thermal resistance

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

All ratings are specified for Tj=25 ^oC, unless otherwise stated

(1)

Device Type

ZW7100-02

ZW7100-04

RRM

200

RSM

300

(1) Sine half wave, f=50Hz, Tj = -40 to +170^oC.

(2) Sine half wave, Pulse width 10 msec. Tj = -40 to +170^oC.

(3) Maximum value for Tj = 170 ^oC.

400

450

(4) See parameter definition below :

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

Repetitive peak reverse

leakage current

15 mA

50 mA (3)

I_RRM

Conducting - on state

Parameter

Symbol

I_F(AV)

Min.

Max.

7100

Typ.

Units Conditions

Average forward current

RMS forward current

Sinewave 180^o, Tc =85℃

I_FRMS

11200

Pulse width 10 msec, sinusoidal

wave-shape, 180^oconduction,

Tj = 170 ℃

Peak one cycle surge

(non repetitive) current

I_FSM

I²t

55000

15000

Pulse width 10 msec, sinusoidal

wave-shape, Tj = 170 ℃

I square t

KA²s

Peak forward voltage

V_FM

V_TO

r_T

1.05

0.74

I_FM= 5000A; 25℃

Threshold voltage

Tj = 170 ℃

Slope resistance

0.026

mΩ

Tj = 170 ℃

di/dt=-25A/us,IFM=1000A,VR=50V

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

Q_rr

500

μC

μs

t_rr

* For guaranteed maximum values, contact factory

http://www.chinarunau.com

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