ZW18000-WELDING DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
200-400VRRM
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WELDING DIODE
Features:
W5
. All diffused structure
. High current density
. Very low forward voltage drop
. Ceramic housing hermetic package
. Ultra-low thermal resistance
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
All ratings are specified for Tj=25 oC, unless otherwise stated
.
V
(1)
V
(1)
Device Type
ZW18000-02
ZW18000-04
RRM
200
RSM
300
(1) Sine half wave, f=50Hz, Tj = -40 to +170oC.
(2) Sine half wave, Pulse width 10 msec. Tj = -40 to +170oC.
(3) Maximum value for Tj = 170 oC.
400
450
(4) See parameter definition below :
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse
leakage current
15 mA
70 mA (3)
IRRM
Conducting - on state
Parameter
Symbol
IF(AV)
Min.
Max.
18000
28200
Typ.
Units Conditions
Average forward current
RMS forward current
A
A
Sinewave 180o, Tc =85℃
IFRMS
Pulse width 10 msec, sinusoidal
wave-shape, 180o conduction,
Tj = 170 ℃
Peak one cycle surge
(non repetitive) current
IFSM
I2t
135
91000
1.05
KA
KA2s
V
Pulse width 10 msec, sinusoidal
wave-shape, Tj = 170 ℃
I square t
Peak forward voltage
VFM
IFM= 5000A; 25℃
Threshold voltage
VTO
rT
0.74
V
mΩ
A
Tj = 170 ℃
Slope resistance
0.016
Tj = 170 ℃
di/dt=-25A/us,IFM=1000A,VR=50V
di/dt=-25A/us,IFM=1000A,VR=50V
di/dt=-25A/us,IFM=1000A,VR=50V
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
IRM(REC)
Qrr
μC
μs
trr
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