Datasheet > ZVP4525Z

ZVP4525Z

更新时间： 2024-11-18 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	670K
描述
SOT-89

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中文翻译

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ZVP4525Z 数据手册

ZVP4525Z

HIGH VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 Low on-resistance:V_DS=-250V,R_DS(ON)≤14Ω@V_GS=-10V,I_D=-205mA

 Low threshold and Low gate drive

 High voltage and Fast switching speed

 Complementary N-channel Type ZVN4525Z

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

Value

-250

Unit

Gate-source voltage

V_GS

±40

(VGS=10V; TA=25°C)(a)

(VGS=10V; TA=70°C)(a)

-200

-164

-1.0

Continuous drain current

I_D

IDM

Pulsed drain current (c)

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Power dissipation at TA=25°C(a)

Junction to Ambient (a)

Junction to Ambient (b)

Operating and Storage temperature

I_S

I_SM

-0.75

-1

1.2

103

°C/W

°C

RθJA

TJ,TSTG

-55 ~+150

NOTES:(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t≤5 secs.

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Gate-threshold voltage

Gate-body leakage current

Zero gate voltage drain current

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=-1mA

VDS=VGS, ID=-1mA

V_DS=0V,

VGS=±40V

V_DS=-250V,

VGS=0V

V(BR)DSS

V_GS(th)

I_GSS

-250 -285

-0.8

-1.5

±1

-2.0

±100

-500

I_DSS

-30

VGS=-10V, ID=-200mA

VGS=-3.5V, ID=-100mA

Drain-source on-resistance (1)

R_DS(ON)

Forward Trans-conductance (3)

Input capacitance(3)

Output capacitance(3)

Reverse transfer capacitance(3)

Turn-on delay time(2)(3)

Turn-on rise time(2)(3)

Turn-off delay time(2)(3)

Turn-off fall time(2)(3)

Total Gate Charge(2)(3)

Gate-Source Charge(2)(3)

Gate Drain Charge(2)(3)

Diode Forward Voltage (1)

Reverse Recovery Time (3)

Reverse Recovery Charge (3)

g_f

200

mS VDS=-10V, ID=-150mA

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Qgs

Qgd

V_SD

t_rr

V_{DS=-25V, VGS=0V, f=1MHz}

12.8

3.91

1.53

3.78

17.5

7.85

2.45 3.45

0.22 0.31

0.45 0.63

0.97

VDD=-30V,ID=-200mA,

VGS=-10V,RG=50Ω,

V_{DS=-25V, VGS=0V,}ID=-200mA

IS=-200mA,

VGS=0V

205

290

IF=-200mA, dI/dt=100A/µS

Q_rr

Note: (1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤2%.

(2)Switching characteristics are independent of operating junction temperature.

(3)For design aid only, not subject to production testing.

1 / 4

E-mail:hkt@heketai.com

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与ZVP4525Z相关器件

型号	品牌	获取价格	描述	数据表
ZVP4525Z(1)	ZETEX	获取价格
ZVP4525ZTA	DIODES	获取价格	250V P-CHANNEL ENHANCEMENT MODE MOSFET
ZVP4525ZTA	ZETEX	获取价格	250V P-CHANNEL ENHANCEMENT MODE MOSFET
ZVP4525ZTC	ZETEX	获取价格	250V P-CHANNEL ENHANCEMENT MODE MOSFET
ZVP4525ZTC	DIODES	获取价格	250V P-CHANNEL ENHANCEMENT MODE MOSFET
ZV-Q-2	OMRON	获取价格	Long Service Life and Large Breaking Power
ZV-Q21-2	OMRON	获取价格	Long Service Life and Large Breaking Power
ZV-Q21-2S	OMRON	获取价格	General-purpose Enclosed Switches with High Breaking Capacity and High Durability
ZV-Q22-2	OMRON	获取价格	Long Service Life and Large Breaking Power
ZV-Q22-2S	OMRON	获取价格	General-purpose Enclosed Switches with High Breaking Capacity and High Durability

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