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ZVP4525 PDF预览

ZVP4525

更新时间: 2024-01-26 15:58:01
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
8页 401K
描述
250V P-CHANNEL ENHANCEMENT MODE MOSFET

ZVP4525 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.1Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):0.205 A
最大漏极电流 (ID):0.205 A最大漏源导通电阻:14 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-F3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZVP4525 数据手册

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ZVP4525G  
250V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(
DESCRIPTION  
This 250V enhancement mode N-channel MOSFET provides users with a  
competitive specification offering efficient power handling capability, high  
impedance and is free from thermal runaway and thermally induced  
secondary breakdown. Applications benefiting from this device include a  
variety of Telecom and general high voltage circuits.  
SOT223  
SOT89 and SOT23-6 versions are also available.  
FEATURES  
High voltage  
Low on-resistance  
Fast switching speed  
Low gate drive  
Low threshold  
Complementary P-channel Type ZVN4525G  
SOT223 package  
S
D
APPLICATIONS  
D
Earth Recall and dialling switches  
Electronic hook switches  
High Voltage Power MOSFET Drivers  
Telecom call routers  
G
Top View  
Solid state relays  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm) QUANTITY  
PER REEL  
ZVP4525GTA  
ZVP4525GTC  
7
8mm embossed  
8mm embossed  
1000 units  
4000 units  
13  
DEVICE MARKING  
ZVP4525G  
ISSUE 1 - MARCH 2001  
1

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