Datasheet > ZVP2110

ZVP2110

更新时间： 2024-10-04 18:09:23

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	1033K
描述
SOT-223

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ZVP2110 数据手册

ZVP2110

P-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

 V_DS=-100V,R_DS(ON)≤8Ω@V_GS=-10V,I_D=-310mA

 Surface Mount device

SOT-223

MECHANICAL DATA



Case: SOT-223

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.112 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DS

Value

-100

Unit

Drain-source voltage

V_GS

Gate-source voltage

±20

Continuous drain current

Pulsed drain current

I_D

IDM

-310

-3

Power dissipation

2.0

°C

TJ,TSTG

Operating and Storage temperature

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Conditions

V^(BR)DSS

Drain-Source breakdown voltage

-100

VGS=0V, ID=-1mA

V_DS=-100V,

-1

μA

VGS=0V,

Zero gate voltage drain current(2)

I_DSS

V_DS=-80V,

V_DS=0V,

-100

-200

-3.5

VGS=0V,TA=+125°C

Gate-body leakage current

Gate-threshold voltage

ON CHARACTERISTICS

I_GSS

VGS=±20V

V_GS(th)

-1.5

-750

125

VDS=VGS, ID=-1mA

V_DS=-25V,

VGS=-10V

On-State Drain Current(1)

Drain-source on-resistance (1)

Forward Trans-conductance (1)(2)

DYNAMIC CHARACTERISTICS

Input capacitance (2)

ID(ON)

R_DS(ON)

g_fs

VGS=-10V, ID=-375mA

mS VDS=-25V, ID=-375mA

100

C_iss

C_oss

C_rss

t_d(on)

t_r

V_{DS=-25V, VGS=0V, f=1MHz}

Output capacitance(2)

Reverse transfer capacitance(2)

Turn-on delay time(2,3)

Turn-on rise time(2,3)

VDD=-25V, ID=-375mA

Turn-off delay time(2,3)

Turn-off fall time(2,3)

t_d(off)

t_f

Notes: 1. Measured under pulsed conditions. Width=300μs. Duty cycle ≤2%.

2. Sample test.

3. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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