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ZVP0545 PDF预览

ZVP0545

更新时间: 2024-10-15 18:09:23
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
6页 963K
描述
SOT-223

ZVP0545 数据手册

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ZVP0545  
P-CHANNEL HIGH VOLTAGE MOSFET  
FEATURES  
VDS=-450V,RDS(ON)≤150Ω@VGS=-10V,ID=-75mA  
Surface Mount device  
SOT-223  
MECHANICAL DATA  
Case: SOT-223  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.112 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VDS  
Value  
-450  
Unit  
V
Drain-source voltage  
VGS  
Gate-source voltage  
±20  
V
Continuous drain current  
Pulsed drain current  
ID  
IDM  
-75  
mA  
mA  
W
-150  
Power dissipation  
PD  
2.0  
TJ,TSTG  
Operating and Storage temperature  
-55 ~+150  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Ma  
x
Parameter  
OFF CHARACTERISTICS  
Symbol Min Typ  
Unit  
Conditions  
V(BR)DSS  
Drain-Source breakdown voltage  
-450  
V
VGS=0V, ID=-1mA  
VDS=-450V,  
IDSS  
-20  
-2  
uA  
mA  
nA  
mA  
VGS=0V,  
Zero gate voltage drain current(TJ=+25°C)  
VDS=-360V,  
VDS=0V,  
VGS=0V,TA=+125°C  
±20  
Gate-body leakage current  
On-State Drain Current(1)  
ON CHARACTERISTICS  
IGSS  
VGS=±20V  
VDS=-25V,  
ID(ON)  
-100  
-1.5  
VGS=-10V  
Gate-threshold voltage  
Drain-source on-resistance (1)  
Forward Transconductance (1)(2)  
DYNAMIC CHARACTERISTICS(2)  
Input capacitance  
VGS(th)  
-4.5  
V
VDS=VGS, ID=-1mA  
RDS(ON)  
203 250 mΩ VGS=-10V, ID=-5A  
123  
42  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
nS  
nS  
nS  
nS  
VDS=-25V, VGS=0V, f=1MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time(2,3)  
Turn-on rise time(2,3)  
28  
9.1  
14.9  
57.4  
34.4  
VDD=-25V, ID=-50mA  
Turn-off delay time(2,3)  
Turn-off fall time(2,3)  
td(off)  
tf  
Notes: 1. Measured under pulsed conditions. Width=300μs. Duty cycle 2%.  
2. Sample test.  
3. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.  
1 / 6  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 100MA I(D) | TO-39