ZVN3306F

更新时间： 2025-01-20 07:42:47

品牌	Logo	应用领域
美台 - DIODES		/
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描述
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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ZVN3306F 数据手册

SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ZVN3306F

ISSUE 3 – JANUARY 1996

FEATURES

_DS(on)= 5Ω

60 Volt V_DS

COMPLEMENTARY TYPE -

PARTMARKING DETAIL -

ZVP3306F

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DS

VALUE

UNIT

Drain-Source Voltage

150

Continuous Drain Current at T_amb=25°C

Pulsed Drain Current

I_D

I_DM

Gate-Source Voltage

V_GS

± 20

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

330

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

BV_DSS

I_D=1mA, V_GS=0V

Gate-Source Threshold

Voltage

V_GS(th)

0.8

2.4

I_D=1mA, V_DS= V_GS

Gate-Body Leakage

I_GSS

I_DSS

_GS=± 20V, V_DS=0V

Zero Gate Voltage

Drain Current

0.5

_DS=60V, V_GS=0V

_DS=48V, V_GS=0V, T=125°C(2)

µA

On-State Drain Current(1)

I_D(on)

750

150

V_DS=18V, V_GS=10V

V_GS=10V, I_D=500mA

Static Drain-Source On-State

Resistance (1)

R_DS(on)

Ω

Forward Transconductance

(1)(2)

g_fs

V_DS=18V, I_D=500mA

Input Capacitance (2)

C_iss

Common Source

Output Capacitance (2)

C_oss

V_DS=18V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance C_rss

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

t_d(on)

t_r

t_d(off)

t_f

3 typ

4 typ

5 typ

_DD≈18V, I_D=500mA

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

3 - 393

12 3

中文翻译

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ZVN3306F 替代型号

型号	品牌	替代类型	描述	数据表
ZVN4106F	DIODES	类似代替	SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
MMBF170-7-F	DIODES	功能相似	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMG6968U-7	DIODES	功能相似	N-CHANNEL ENHANCEMENT MODE MOSFET

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