生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.1 |
配置: | SINGLE | 最小漏源击穿电压: | 350 V |
最大漏极电流 (ID): | 0.09 A | 最大漏源导通电阻: | 40 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 200 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZVN2535ASTOA | ZETEX |
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Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Met | |
ZVN2535ASTOB | ZETEX |
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Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Met | |
ZVN2535ASTOB | DIODES |
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Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Met | |
ZVN2535ASTZ | DIODES |
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Small Signal Field-Effect Transistor, 0.09A I(D), 350V, 1-Element, N-Channel, Silicon, Met | |
ZVN2535B | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 250MA I(D) | TO-39 | |
ZVN2535D | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | CHIP | |
ZVN2535DWP | ZETEX |
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Small Signal Field-Effect Transistor, 350V, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
ZVN2535L | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 250MA I(D) | TO-220 | |
ZV-N-2S | OMRON |
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General-purpose Enclosed Switches with High Breaking Capacity and High Durability | |
ZVN3306A | ZETEX |
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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |