ZTX857STOA

更新时间： 2024-01-28 06:37:17

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管局域网
页数	文件大小	规格书
3页	80K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

ZTX857STOA 数据手册

NPN SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 1 APRIL 94

ZTX857

FEATURES

300 Volt V_CEO

3 Amps continuous current

Up to 5 Amps peak current

Very low saturation voltage

P_tot= 1.2 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

330

Collector-Emitter Voltage

Emitter-Base Voltage

300

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

1.58

P_totp

P_tot

°C

1.2

T_j:T_stg

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

V_(BR)CER

V_(BR)CEO

V_(BR)EBO

I_CBO

330

300

475

350

I_C=100µA

Collector-Emitter Breakdown

Voltag

IC=1µA, RB ≤1KΩ

I_C=10mA*

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

I_E=100µA

Collector Cut-Off Current

Emitter Cut-Off Current

µA

V_CB=300V

V_CB=300V, T_amb=100°C

I_CER

R ≤1KΩ

µA

V_CB=300V

V_CB=300V, T_amb=100°C

I_EBO

V_EB=6V

Collector-Emitter Saturation

Voltage

V_CE(sat)

140

170

100

140

200

250

I_C=0.5A, I_B=50mA*

I_C=1A, I_B=100mA*

I_C=2A, I_B=200mA*

I_C=3A, I_B=600mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

870

1000 mV

I_C=2A, I_B=200mA*

3-303

12 3

中文翻译

下载PDF

与ZTX857STOA相关器件

型号	品牌	获取价格	描述	数据表
ZTX857STOB	DIODES	获取价格	暂无描述
ZTX857STZ	DIODES	获取价格	Power Bipolar Transistor, 3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
ZTX858	ZETEX	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
ZTX858SMTA	DIODES	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
ZTX858STOA	DIODES	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
ZTX858STOB	DIODES	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
ZTX858STZ	DIODES	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
ZTX869	DIODES	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ZTX869	ZETEX	获取价格	NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ZTX869SM	DIODES	获取价格	Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3