ZTX857SMTA

更新时间： 2024-01-27 09:40:35

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数据手册

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ZTX857SMTA 数据手册

NPN SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 1 APRIL 94

ZTX857

FEATURES

300 Volt V_CEO

3 Amps continuous current

Up to 5 Amps peak current

Very low saturation voltage

P_tot= 1.2 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

330

Collector-Emitter Voltage

Emitter-Base Voltage

300

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

1.58

P_totp

P_tot

°C

1.2

T_j:T_stg

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

V_(BR)CER

V_(BR)CEO

V_(BR)EBO

I_CBO

330

300

475

350

I_C=100µA

Collector-Emitter Breakdown

Voltag

IC=1µA, RB ≤1KΩ

I_C=10mA*

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

I_E=100µA

Collector Cut-Off Current

Emitter Cut-Off Current

µA

V_CB=300V

V_CB=300V, T_amb=100°C

I_CER

R ≤1KΩ

µA

V_CB=300V

V_CB=300V, T_amb=100°C

I_EBO

V_EB=6V

Collector-Emitter Saturation

Voltage

V_CE(sat)

140

170

100

140

200

250

I_C=0.5A, I_B=50mA*

I_C=1A, I_B=100mA*

I_C=2A, I_B=200mA*

I_C=3A, I_B=600mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

870

1000 mV

I_C=2A, I_B=200mA*

3-303

12 3

中文翻译

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