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ZTX857 PDF预览

ZTX857

更新时间: 2024-01-17 22:49:26
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
3页 79K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

ZTX857 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:TO-92 COMPATIBLE, E-LINE PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:15 weeks
风险等级:0.8最大集电极电流 (IC):3 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):15JESD-30 代码:R-PSIP-W3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzBase Number Matches:1

ZTX857 数据手册

 浏览型号ZTX857的Datasheet PDF文件第2页浏览型号ZTX857的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH CURRENT TRANSISTOR  
ISSUE 1 – APRIL 94  
ZTX857  
FEATURES  
*
*
*
*
*
300 Volt VCEO  
3 Amps continuous current  
Up to 5 Amps peak current  
Very low saturation voltage  
Ptot= 1.2 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
330  
Collector-Emitter Voltage  
Emitter-Base Voltage  
300  
V
6
V
Peak Pulse Current  
5
A
Continuous Collector Current  
Practical Power Dissipation*  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
3
1.58  
A
Ptotp  
Ptot  
W
W
°C  
1.2  
Tj:Tstg  
-55 to +200  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
330  
330  
300  
6
475  
475  
350  
8
V
V
V
V
IC=100µA  
Collector-Emitter Breakdown  
Voltag  
IC=1µA, RB 1KΩ  
IC=10mA*  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
IE=100µA  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
50  
1
nA  
µA  
VCB=300V  
VCB=300V, Tamb=100°C  
ICER  
R 1KΩ  
50  
1
nA  
µA  
VCB=300V  
VCB=300V, Tamb=100°C  
IEBO  
10  
nA  
VEB=6V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
50  
80  
140  
170  
100  
140  
200  
250  
mV  
mV  
mV  
mV  
IC=0.5A, IB=50mA*  
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
IC=3A, IB=600mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
870  
1000 mV  
IC=2A, IB=200mA*  
3-303  

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