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ZTX853Q PDF预览

ZTX853Q

更新时间: 2023-09-24 09:17:42
品牌 Logo 应用领域
美台 - DIODES 晶体管功率双极晶体管
页数 文件大小 规格书
3页 64K
描述
NPN, 100V, 4A, E-Line

ZTX853Q 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-W3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.14最大集电极电流 (IC):4 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzVCEsat-Max:0.2 V
Base Number Matches:1

ZTX853Q 数据手册

 浏览型号ZTX853Q的Datasheet PDF文件第2页浏览型号ZTX853Q的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH CURRENT TRANSISTOR  
ISSUE 3 - NOVEMBER 1995  
ZTX853  
FEATURES  
*
*
*
*
*
100 Volt VCEO  
4 Amps continuous current  
Up to 10 Amps peak current  
Very low saturation voltage  
Ptot=1.2 Watts  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
200  
Collector-Emitter Voltage  
Emitter-Base Voltage  
100  
V
6
V
Peak Pulse Current  
10  
4
A
Continuous Collector Current  
Practical Power Dissipation*  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
A
Ptotp  
1.58  
W
W
°C  
Ptot  
1.2  
Tj:Tstg  
-55 to +200  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
200  
200  
100  
6
300  
300  
120  
8
V
V
V
V
IC=100µA  
Collector-Emitter Breakdown  
Voltag  
IC=1µA, RB 1KΩ  
IC=10mA*  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
IE=100µA  
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
50  
1
nA  
µA  
VCB=150V  
VCB=150V, Tamb=100°C  
ICER  
R 1KΩ  
50  
1
nA  
µA  
VCB=150V  
VCB=150V, Tamb=100°C  
IEBO  
10  
nA  
VEB=6V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
14  
100  
160  
50  
150  
200  
mV  
mV  
mV  
IC=0.1A, IB=5mA  
IC=2A, IB=100mA  
IC=4A, IB=400mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
960  
1100 mV  
IC=4A, IB=400mA*  
3-297  

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