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ZTX849 PDF预览

ZTX849

更新时间: 2024-10-29 22:18:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
3页 64K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR

ZTX849 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:E-LINE PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.11Is Samacsys:N
最大集电极电流 (IC):5 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-92JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.22 VBase Number Matches:1

ZTX849 数据手册

 浏览型号ZTX849的Datasheet PDF文件第2页浏览型号ZTX849的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH CURRENT TRANSISTOR  
ISSUE 2 – MARCH 94  
ZTX849  
FEATURES  
*
*
*
5 Amps continuous current  
Up to 20 Amps peak current  
Very low saturation voltages  
APPLICATIONS  
*
*
*
*
LCD backlight converter  
Flash gun converters  
Battery powered circuits  
Motor drivers  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
V
6
V
Peak Pulse Current  
20  
5
A
Continuous Collector Current  
Practical Power Dissipation*  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
A
Ptotp  
Ptot  
1.58  
W
W
°C  
1.2  
Tj:Tstg  
-55 to +200  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C unless otherwise stated)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CER  
V(BR)CEO  
V(BR)EBO  
ICBO  
80  
80  
30  
6
120  
120  
40  
V
V
V
V
IC=100µA  
Collector-Emitter Breakdown  
Voltag  
IC=1µA, RB 1KΩ  
IC=10mA*  
IE=100µA  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
8
Collector Cut-Off Current  
Collector Cut-Off Current  
Emitter Cut-Off Current  
50  
1
nA  
µA  
VCB=70V  
VCB=70V, Tamb=100°C  
ICER  
R 1KΩ  
50  
1
nA  
µA  
VCB=70V  
VCB=70V, Tamb=100°C  
IEBO  
10  
nA  
VEB=6V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
25  
50  
110  
180  
50  
mV  
mV  
mV  
mV  
IC=0.5A, IB=20mA*  
IC=1A, IB=20mA*  
IC=2A, IB=20mA*  
IC=5A, IB=200mA*  
100  
200  
220  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
930  
1050 mV  
IC=5A, IB=200mA*  
3-291  

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