ZTX796ASMTC

更新时间： 2024-11-25 13:16:15

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4页	223K
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中文翻译

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数据手册

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ZTX796ASMTC 数据手册

A Product Line of

Diodes Incorporated

ZTX796A

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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Features

Mechanical Data

•

200 Volt V_CEO

Gain of 250 at IC=0.3 Amps

Very low saturation voltage

•

Case: E-Line

E-Line

TO92 Compatible

Rounded

face

C B E

Bottom View

Pin Configuration

Maximum Ratings

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_CM

Value

-200

-5

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

-1

Continuous Collector Current

-0.5

I_C

Thermal Characteristics

Characteristic

Practical Power Dissipation (Note 1)

Power Dissipation

Symbol

P_totp

Value

1.5

Unit

mW /°C

T_A= 25°C

Derate above 25°C

5.7

P_tot

Thermal Resistance Junction to Ambient₁(Note 2)

Thermal Resistance Junction to Ambient₂(Note 2)

Thermal Resistance Junction to Case

175

116

°C/W

°C

R_θ

JA1

JA2

R_θ

Operating and Storage Temperature Range

-55 to +200

T_J,T_STG

Notes:

1. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum

2. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

1 of 4

www.diodes.com

September 2009

ZTX796A

Document Number DS31908 Rev. 2 - 2

12 3 4

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