5秒后页面跳转
ZTX796ASMTA PDF预览

ZTX796ASMTA

更新时间: 2024-11-25 13:16:15
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管局域网
页数 文件大小 规格书
4页 223K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX796ASMTA 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:SMALL OUTLINE, R-PSSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.26
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PSSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

ZTX796ASMTA 数据手册

 浏览型号ZTX796ASMTA的Datasheet PDF文件第2页浏览型号ZTX796ASMTA的Datasheet PDF文件第3页浏览型号ZTX796ASMTA的Datasheet PDF文件第4页 
A Product Line of  
Diodes Incorporated  
ZTX796A  
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
200 Volt VCEO  
Gain of 250 at IC=0.3 Amps  
Very low saturation voltage  
Case: E-Line  
E-Line  
TO92 Compatible  
Rounded  
face  
C B E  
Bottom View  
Pin Configuration  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-200  
-200  
-5  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
-1  
A
Continuous Collector Current  
-0.5  
A
IC  
Thermal Characteristics  
Characteristic  
Practical Power Dissipation (Note 1)  
Power Dissipation  
Symbol  
Ptotp  
Value  
1.5  
Unit  
W
W
mW /°C  
TA = 25°C  
Derate above 25°C  
1
5.7  
Ptot  
Thermal Resistance Junction to Ambient1 (Note 2)  
Thermal Resistance Junction to Ambient2 (Note 2)  
Thermal Resistance Junction to Case  
175  
116  
°C/W  
°C/W  
°C/W  
°C  
Rθ  
Rθ  
JA1  
JA2  
70  
Rθ  
JC  
Operating and Storage Temperature Range  
-55 to +200  
TJ, TSTG  
Notes:  
1. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum  
2. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.  
1 of 4  
www.diodes.com  
September 2009  
© Diodes Incorporated  
ZTX796A  
Document Number DS31908 Rev. 2 - 2  

与ZTX796ASMTA相关器件

型号 品牌 获取价格 描述 数据表
ZTX796ASMTC DIODES

获取价格

暂无描述
ZTX796ASTOA DIODES

获取价格

500mA, 200V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZTX796ASTZ DIODES

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
ZTX849 ZETEX

获取价格

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ZTX849 DIODES

获取价格

NPN SILICON PLANAR MEDIUM POWER
ZTX849SM DIODES

获取价格

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
ZTX849SMTA ZETEX

获取价格

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
ZTX849SMTC ZETEX

获取价格

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
ZTX849STOA ZETEX

获取价格

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
ZTX849STOB DIODES

获取价格

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR