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ZTX796A PDF预览

ZTX796A

更新时间: 2024-11-25 07:42:51
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管局域网
页数 文件大小 规格书
4页 223K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX796A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:15 weeks
风险等级:5.23Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

ZTX796A 数据手册

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A Product Line of  
Diodes Incorporated  
ZTX796A  
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
200 Volt VCEO  
Gain of 250 at IC=0.3 Amps  
Very low saturation voltage  
Case: E-Line  
E-Line  
TO92 Compatible  
Rounded  
face  
C B E  
Bottom View  
Pin Configuration  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-200  
-200  
-5  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
-1  
A
Continuous Collector Current  
-0.5  
A
IC  
Thermal Characteristics  
Characteristic  
Practical Power Dissipation (Note 1)  
Power Dissipation  
Symbol  
Ptotp  
Value  
1.5  
Unit  
W
W
mW /°C  
TA = 25°C  
Derate above 25°C  
1
5.7  
Ptot  
Thermal Resistance Junction to Ambient1 (Note 2)  
Thermal Resistance Junction to Ambient2 (Note 2)  
Thermal Resistance Junction to Case  
175  
116  
°C/W  
°C/W  
°C/W  
°C  
Rθ  
Rθ  
JA1  
JA2  
70  
Rθ  
JC  
Operating and Storage Temperature Range  
-55 to +200  
TJ, TSTG  
Notes:  
1. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum  
2. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.  
1 of 4  
www.diodes.com  
September 2009  
© Diodes Incorporated  
ZTX796A  
Document Number DS31908 Rev. 2 - 2  

ZTX796A 替代型号

型号 品牌 替代类型 描述 数据表
ZTX796ASTZ DIODES

类似代替

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
ZTX796ASTOA DIODES

功能相似

500mA, 200V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3

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