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ZTX795ASTOB PDF预览

ZTX795ASTOB

更新时间: 2024-10-30 13:16:15
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
3页 64K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX795ASTOB 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-W3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.27最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.3 V
Base Number Matches:1

ZTX795ASTOB 数据手册

 浏览型号ZTX795ASTOB的Datasheet PDF文件第2页浏览型号ZTX795ASTOB的Datasheet PDF文件第3页 
PNP SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
ISSUE 1 – APRIL 94  
ZTX795A  
FEATURES  
*
*
*
140 Volt VCEO  
Gain of 250 at IC=0.2 Amps  
Very low saturation voltage  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-140  
-140  
-5  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
-1  
A
Continuous Collector Current  
Practical Power Dissipation*  
IC  
-0.5  
1.5  
A
Ptotp  
Ptot  
W
Power Dissipation at Tamb=25°C  
derate above 25°C  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
-140  
-140  
-5  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
-0.1  
-0.1  
VCB=-100V  
µA  
µA  
IEBO  
VEB=-4V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
-0.3  
-0.3  
-0.25  
V
V
V
IC=-100mA, IB=-1mA*  
IC=-200mA, IB=-5mA*  
IC=-500mA, IB=-50mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-0.95  
V
IC=-500mA, IB=-50mA*  
Base-Emitter  
Turn-On Voltage  
-0.75  
V
IC=-500mA, VCE=-2V*  
Static Forward Current  
Transfer Ratio  
300  
250  
100  
800  
IC=-10mA, VCE=-2V*  
IC=-200mA, VCE=-2V*  
IC=-300mA, VCE=-2V*  
3-285  

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