ZTX792ASTOB

更新时间： 2024-11-25 12:58:39

品牌	Logo	应用领域
美台 - DIODES		晶体小信号双极晶体管开关局域网
页数	文件大小	规格书
3页	65K
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数据手册

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ZTX792ASTOB 数据手册

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 2 APRIL 94

ZTX792A

FEATURES

70 Volt V_CEO

Gain of 400 at I_C=3 Amps

Very low saturation voltage

APPLICATIONS

Darlington replacement

Flash gun convertors

Battery powered circuits

Motor drivers

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-75

-70

-5

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

-4

Continuous Collector Current

Practical Power Dissipation*

I_C

-2

P_totp

P_tot

1.5

Power Dissipation at T_amb=25°C

derate above 25°C

5.7

mW/°C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

-75

-70

-5

I_C=-100µA

I_C=-10mA*

I_E=-100µA

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

-0.1

V_CB=-40V

µA

I_EBO

V_EB=-4V

Collector-Emitter Saturation

Voltage

V_CE(sat)

-0.45

-0.5

I_C=-500mA, I_B=-5mA*

I_C=-1A, I_B=-25mA*

I_C=-2A, I_B=-200mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-0.95

I_C=-1A, I_B=-25mA*

Base-Emitter

Turn-On Voltage

-0.75

IC=-1A, V_CE=-2V*

Static Forward Current

Transfer

300

250

200

800

I_C=-10mA, V_CE=-2V*

I_C=-500mA, V_CE=-2V*

I_C=-1A, V_CE=-2V*

3-282

12 3

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