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ZTX788A PDF预览

ZTX788A

更新时间: 2024-01-02 23:09:30
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
2页 50K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX788A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:E-LINE PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.16最大集电极电流 (IC):3 A
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):80JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

ZTX788A 数据手册

 浏览型号ZTX788A的Datasheet PDF文件第2页 
PNP SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
PROVISIONAL DATASHEET ISSUE 2 – SEPTEMBER 94  
ZTX788A  
FEATURES  
*
*
*
15 Volt VCEO  
Gain of 200 at IC=2 Amps  
Very low saturation voltage  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-20  
-15  
-5  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
-10  
-3  
A
Continuous Collector Current  
Practical Power Dissipation*  
IC  
A
Ptotp  
Ptot  
1.5  
W
Power Dissipation at Tamb=25°C  
derate above 25°C  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-20  
-15  
-5  
-30  
-20  
-8.5  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
-0.1  
-10  
VCB=-10V  
µA  
µA  
VCB=-10V, Tamb=100°C  
Emitter Cut-Off Current  
IEBO  
-0.1  
VEB=-4V  
µA  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
-0.025 -0.035  
-0.25 -0.32  
-0.28 -0.33  
V
V
V
IC=-0.1A, IB=-2mA*  
IC=-2A, IB=-20mA*  
IC=-3A, IB=-200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-0.85 -1.0  
V
IC=-2A, IB=-20mA*  
Base-Emitter  
Turn-On Voltage  
-0.8  
V
IC=-2A, VCE=-3V*  
Static Forward Current  
Transfer Ratio  
300  
250  
200  
80  
800  
IC=-10mA, VCE=-1V*  
IC=-1A, VCE=-1V*  
IC=-2A, VCE=-1V*  
IC=-10A, VCE=-2V*  
3-271  

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