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ZTX758 PDF预览

ZTX758

更新时间: 2024-10-14 07:42:51
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页数 文件大小 规格书
3页 62K
描述
PNP SILICON PLANAR MEDIUM POWER

ZTX758 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:IN-LINE, R-PSIP-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:15 weeks
风险等级:0.89Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PSIP-W3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

ZTX758 数据手册

 浏览型号ZTX758的Datasheet PDF文件第2页浏览型号ZTX758的Datasheet PDF文件第3页 
PNP SILICON PLANAR MEDIUM POWER  
ZTX758  
HIGH VOLTAGE TRANSISTOR  
ISSUE 1 – APRIL 94  
FEATURES  
*
*
*
400 Volt VCEO  
0.5 Amp continuous current  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-400  
-400  
-5  
V
V
Peak Pulse Current  
-1  
A
Continuous Collector Current  
IC  
-500  
mA  
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
TYP.  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -400  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
VCB=-320V  
VCE=-320V  
VEB=-4V  
Collector-Emitter  
Breakdown Voltage  
VCEO(SUS) -400  
V
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
-5  
V
Collector Cut-Off  
Current  
-100  
-100  
-100  
nA  
nA  
nA  
Collector Cut-Off  
Current  
ICES  
Emitter Cut-Off Current IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.30  
-0.25  
-0.50  
V
V
V
IC=-20mA, IB=-1mA  
IC=-50mA, IB=-5mA*  
IC=-100mA, IB=-10mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
-0.9  
V
IC=-100mA, IB=-10mA*  
Base-Emitter  
Turn On Voltage  
-0.9  
V
IC=-100mA, VCE=-5V*  
Static Forward Current hFE  
Transfer Ratio  
50  
50  
40  
IC=-1mA, VCE=-5V  
IC=-100mA, VCE=-5V*  
IC=-200mA, VCE=-10V*  
3-267  

ZTX758 替代型号

型号 品牌 替代类型 描述 数据表
ZTX758STZ DIODES

类似代替

Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
ZTX758STOA DIODES

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Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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PNP SILICON PLANAR MEDIUM POWER TRANSISTOR