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ZTX751SMTC PDF预览

ZTX751SMTC

更新时间: 2024-11-25 13:00:11
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
3页 64K
描述
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX751SMTC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TO-92 COMPATIBLE, E-LINE PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.22最大集电极电流 (IC):2 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PSSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.5 V
Base Number Matches:1

ZTX751SMTC 数据手册

 浏览型号ZTX751SMTC的Datasheet PDF文件第2页浏览型号ZTX751SMTC的Datasheet PDF文件第3页 
PNP SILICON PLANAR  
ZTX750  
ZTX751  
MEDIUM POWER TRANSISTORS  
ISSUE 2 – JULY 94  
FEATURES  
*
*
*
*
60 Volt VCEO  
2 Amp continuous current  
Low saturation voltage  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX750  
-60  
ZTX751  
-80  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
-45  
-60  
-5  
-6  
-2  
Peak Pulse Current  
Continuous Collector Current  
IC  
Power Dissipation: at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
ZTX750  
Tj:Tstg  
-55 to +200  
°C  
= 25°C unless otherwise stated).  
amb  
ZTX751  
PARAMETER  
SYMBOL  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown  
Voltage  
V(BR)CBO -60  
V(BR)CEO -45  
V(BR)EBO -5  
ICBO  
-80  
-60  
-5  
V
V
V
IC=-100µA  
IC=-10mA  
IE=-100µA  
Collector-Emitter  
Breakdown  
Voltage  
Emitter-Base  
Breakdown  
Voltage  
Collector Cut-Off  
Current  
-0.1  
-10  
VCB=-45V  
VCB=-60V  
VCB=-45V,T =100°C  
VCB=-60V,T =100°C  
µA  
µA  
µA  
µA  
-0.1  
-10  
Emitter Cut-Off  
Current  
IEBO  
-0.1  
-0.1  
VEB=-4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.15 -0.3  
-0.28 -0.5  
-0.15 -0.3  
-0.28 -0.5  
V
V
IC=-1A, IB=-100mA  
IC=-2A, IB=-200mA  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-0.9 -1.25  
-0.9 -1.25  
V
IC=-1A, IB=-100mA  
3-257  

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