Datasheet > ZTX696B

ZTX696B

更新时间： 2024-11-24 22:34:03

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
3页	57K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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ZTX696B 数据手册

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 3 - NOVEMBER 1995

ZTX696B

FEATURES

180 Volt V_CEO

Gain of 500 at I_C=100mA

Very low saturation voltage

APPLICATIONS

Darlington replacement

Battery powered circuits

Motor drivers

E-Line

Relay / solenoid drivers

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

180

Continuous Collector Current

Practical Power Dissipation *

I_C

0.5

1.5

P_totp

P_tot

Power Dissipation at T_amb=25°C

derate above 25°C

5.7

mW/°C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

180

I_C=100µA

I_C=10mA*

I_E=100µA

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

0.1

V_CB=145V

µA

I_EBO

V_EB=4V

Collector-Emitter Saturation

Voltage

V_CE(sat)

0.2

0.25

I_C=50mA, I_B=0.5mA*

I_C=100mA, I_B=2mA*

I_C=200mA, I_B=5mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

0.9

I_C=200mA, I_B=5mA*

Base-Emitter

Turn-On Voltage

I_C=200mA, V_CE=5V*

Static Forward Current

Transfer Ratio

500

150

I_C=100mA, V_CE=5V*

I_C=200mA, V_CE=5V*

3-247

12 3

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