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ZTX694B PDF预览

ZTX694B

更新时间: 2024-11-24 22:34:03
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
3页 66K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

ZTX694B 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:CYLINDRICAL, O-PBCY-W3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:7.29最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):150JESD-30 代码:O-PBCY-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzVCEsat-Max:0.5 V

ZTX694B 数据手册

 浏览型号ZTX694B的Datasheet PDF文件第2页浏览型号ZTX694B的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH GAIN TRANSISTOR  
ISSUE 1 – APRIl 94  
ZTX694B  
FEATURES  
*
*
*
120 Volt VCEO  
Gain of 400 at IC=200mA  
Very low saturation voltage  
APPLICATIONS  
*
*
*
*
Darlington replacement  
Relay / solenoid driver  
Battery powered circuits  
Motor drivers  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
120  
120  
5
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
1
A
Continuous Collector Current  
Practical Power Dissipation*  
IC  
0.5  
1.5  
A
Ptotp  
Ptot  
W
Power Dissipation Tamb=25°C  
derate above 25°C  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 1 inch square minimum  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C)  
PARAMETER  
SYMBOL MIN. TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
120  
120  
5
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter Breakdown  
Voltage  
Emitter-Base Breakdown  
Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
ICBO  
0.1  
0.1  
VCB=100V  
µA  
µA  
IEBO  
VEB=4V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
0.25  
0.5  
V
V
IC=100mA, IB=0.5mA*  
IC=400mA, IB=5mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
0.9  
V
IC=1A, IB=10mA*  
Base-Emitter  
Turn-On Voltage  
0.9  
V
IC=1A, VCE=2V*  
Static Forward Current  
Transfer Ratio  
500  
400  
150  
IC=100mA, VCE=2V*  
IC=200mA, VCE=2V*  
IC=400mA, VCE=2V*  
3-244  

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