ZTX656

更新时间： 2024-01-21 18:50:42

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管高压局域网
页数	文件大小	规格书
2页	53K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS

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中文翻译

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数据手册

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ZTX656 数据手册

NPN SILICON PLANAR MEDIUM POWER

ZTX656

ZTX657

HIGH VOLTAGE TRANSISTORS

ISSUE 2 JULY 94

FEATURES

300 Volt V_CEO

0.5 Amp continuous current

P_tot=1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

ZTX656

200

ZTX657

300

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

200

300

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

0.5

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

ZTX656

ZTX657

PARAMETER

SYMBOL

V_(BR)CBO

UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

200

300

I_C=100µA, I_E=0

I_C=10mA, I_B=0*

I_E=100µA, I_C=0

V_CB=160V, I_E=0

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

100

0.5

100

V_CB=200V, I_E=0

Emitter Cut-Off

Current

I_EBO

V_EB=3V, I_C=0

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

h_FE

0.5

I_C=100mA, I_B=10mA*

IC=100mA, V_CE=5V*

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward

Current Transfer

Ratio

I_C=100mA, V_CE=5V

I_C=10mA, V_CE=5V

Transition

Frequency

f_T

MHz I_C=10mA, V_CE=20V

f=20MHz

3-227

中文翻译

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ZTX656M1TC	ZETEX	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX656Q	ZETEX	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI