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ZTX655STOB PDF预览

ZTX655STOB

更新时间: 2024-09-13 19:59:07
品牌 Logo 应用领域
美台 - DIODES 开关晶体管
页数 文件大小 规格书
2页 66K
描述
Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX655STOB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:IN-LINE, R-PSIP-W3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.13最大集电极电流 (IC):1 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):20JESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

ZTX655STOB 数据手册

 浏览型号ZTX655STOB的Datasheet PDF文件第2页 
NPN SILICON PLANAR  
ZTX654  
ZTX655  
MEDIUM POWER TRANSISTORS  
ISSUE 2 – JULY 94  
FEATURES  
*
*
*
*
150 Volt VCEO  
1 Amp continuous current  
Low saturation voltage  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX654  
125  
ZTX655  
150  
UNIT  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
125  
150  
5
2
1
1
V
Peak Pulse Current  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
A
Ptot  
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
amb  
ZTX654  
= 25°C unless otherwise stated).  
ZTX655  
PARAMETER  
SYMBOL  
V(BR)CBO  
UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
125  
125  
5
150  
150  
5
V
V
V
IC=100µA, IE=0  
IC=10mA, IB=0*  
IE=100µA, IC=0  
VCB=100V, IE=0  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
100  
nA  
nA  
100  
100  
VCB=125V, IE=0  
Emitter Cut-Off  
Current  
IEBO  
nA  
VEB=3V, IC=0  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
0.5  
0.5  
0.5  
0.5  
V
V
IC=500mA, IB=50mA*  
IC=1A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
1.1  
1.1  
V
IC=500mA, IB=50mA*  
Base-Emitter  
Turn-On Voltage  
1.0  
1.0  
V
IC=500mA, VCE=5V*  
Static Forward  
Current Transfer  
Ratio  
50  
50  
20  
50  
50  
20  
IC=10mA, VCE=5V  
IC=500mA, VCE=5V*  
IC=1A, VCE=5V*  
Transition  
Frequency  
fT  
30  
30  
MHz IC=10mA, VCE=20V  
f=20MHz  
Output Capacitance Cobo  
20  
20  
pF  
VCB=20V, f=1MHz  
3-225  

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