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ZTX651STOB PDF预览

ZTX651STOB

更新时间: 2024-10-14 19:58:35
品牌 Logo 应用领域
捷特科 - ZETEX 开关晶体管
页数 文件大小 规格书
3页 81K
描述
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX651STOB 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TO-92 COMPATIBLE, E-LINE PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.12最大集电极电流 (IC):2 A
基于收集器的最大容量:30 pF集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSIP-W3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:NPN功耗环境最大值:2.5 W
认证状态:Not Qualified参考标准:CECC
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
VCEsat-Max:0.5 VBase Number Matches:1

ZTX651STOB 数据手册

 浏览型号ZTX651STOB的Datasheet PDF文件第2页浏览型号ZTX651STOB的Datasheet PDF文件第3页 
NPN SILICON PLANAR  
ZTX650  
ZTX651  
MEDIUM POWER TRANSISTORS  
ISSUE 2 – JULY 94  
FEATURES  
*
*
*
*
60 Volt VCEO  
2 Amp continuous current  
Low saturation voltage  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX650  
60  
ZTX651  
80  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
45  
60  
5
6
2
Peak Pulse Current  
Continuous Collector Current  
IC  
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
ZTX650  
Tj:Tstg  
-55 to +200  
°C  
= 25°C unless otherwise stated).  
amb  
ZTX651  
PARAMETER  
SYMBOL  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO 60  
80  
60  
5
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO 45  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
5
Collector Cut-Off  
Current  
ICBO  
0.1  
10  
V
CB=45V  
VCB=60V  
CB=45V,T =100°C  
µA  
µA  
µA  
µA  
0.1  
V
10  
VCB=60V,T =100°C  
Emitter Cut-Off  
Current  
IEBO  
0.1  
0.1  
VEB=4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
0.12 0.3  
0.23 0.5  
0.12 0.3  
0.23 0.5  
V
V
IC=1A, IB=100mA*  
IC=2A, IB=200mA*  
Base-Emitter  
Saturation Voltage  
0.9  
1.25  
0.9  
1.25  
V
IC=1A, IB=100mA*  
Base-Emitter  
Turn-On Voltage  
0.8  
1
0.8  
1
V
IC=1A, VCE=2V*  
3-219  

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