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ZTX600BK PDF预览

ZTX600BK

更新时间: 2024-12-03 13:16:15
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管局域网
页数 文件大小 规格书
3页 75K
描述
Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX600BK 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:IN-LINE, R-PSIP-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.39
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:140 V配置:DARLINGTON
最小直流电流增益 (hFE):5000JESD-30 代码:R-PSIP-W3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified参考标准:CECC
表面贴装:NO端子形式:WIRE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

ZTX600BK 数据手册

 浏览型号ZTX600BK的Datasheet PDF文件第2页浏览型号ZTX600BK的Datasheet PDF文件第3页 
NPN SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTORS  
ISSUE 2 – JUNE 94  
ZTX600  
ZTX601  
FEATURES  
*
*
*
*
160 Volt VCEO  
1 Amp continuous current  
Gain of 5K at IC=1 Amp  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
ZTX600  
160  
ZTX601  
180  
UNIT  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
A
A
140  
160  
10  
4
Peak Pulse Current  
Continuous Collector Current  
IC  
1
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
ZTX600  
ZTX601  
UNIT CONDITIONS.  
MIN. TYP. MAX. MIN. TYP. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO 160  
V(BR)CEO 140  
V(BR)EBO 10  
ICBO  
180  
160  
10  
V
V
V
IC=100µA  
IC=10mA*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
0.01  
10  
V
CB=140V  
VCB=160V  
CB=140V,T =100°C  
µA  
µA  
µA  
µA  
0.01  
V
10  
VCB=160V,T =100°C  
Emitter Cut-Off  
Current  
IEBO  
0.1  
10  
0.1  
VEB=8V  
µA  
Colllector-Emitter  
Cut-Off Current  
ICES  
VCES=140V  
VCES=160V  
µA  
µA  
10  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
0.75 1.1  
0.85 1.2  
0.75 1.1  
0.85 1.2  
V
V
IC=0.5A, IB=5mA*  
IC=1A, IB=10mA*  
Base-Emitter  
Saturation Voltage  
1.7  
1.9  
1.7  
1.9  
V
IC=1A, IB=10mA*  
Base-Emitter  
Turn-On Voltage  
1.5  
1.7  
1.5  
1.7  
V
IC=1A, VCE=5V*  
3-206  

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