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ZTX576 PDF预览

ZTX576

更新时间: 2024-12-09 22:34:03
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管高压局域网
页数 文件大小 规格书
2页 52K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

ZTX576 数据手册

 浏览型号ZTX576的Datasheet PDF文件第2页 
PNP SILICON PLANAR MEDIUM POWER  
HIGH VOLTAGE TRANSISTOR  
ISSUE 1 – APRIL 94  
ZTX576  
FEATURES  
*
*
*
200 Volt VCEO  
1 Amp continuous current  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-200  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-200  
V
-5  
V
Peak Pulse Current  
-2  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
-1  
1
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -200  
TYP.  
MAX. UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
IC=-100µA  
IC=-10mA*  
IE=-100µA  
VCB=-160V  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO -200  
V(BR)EBO -5  
ICBO  
V
V
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
-0.1  
µA  
Emitter Cut-Off Current IEBO  
-0.1  
-0.3  
VEB=-4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
V
IC=-100mA, IB=-10mA*  
IC=-100mA, IB=-10mA*  
IC=-100mA, VCE=-10V*  
Base-Emitter  
Saturation Voltage  
-1  
-1  
V
V
Base-Emitter  
Turn-on Voltage  
Static Forward Current hFE  
Transfer Ratio  
50  
50  
IC=-10mA, VCE=-10V*  
IC=-300mA, VCE=-10V*  
300  
Transition  
Frequency  
fT  
100  
MHz  
IC=-50mA, VCE=-10V  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-204  

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