Datasheet > ZTX560

ZTX560

更新时间： 2024-01-02 22:37:40

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管高压局域网
页数	文件大小	规格书
3页	113K
描述
E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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技术参数
数据手册

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ZTX560 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	not_compliant	风险等级：	5.59
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

ZTX560 数据手册

ZTX560

E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES

• Excellent h_FEcharacterisristics up to I_C=50mA

• Low Saturation voltages

PARTMARKING

ZTX

560

E-LINE

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

-500

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

-500

-5

Peak pulse current

-500

Continuous collector current

Power dissipation

-150

tot

Operating and storage temperature range

T :T

-55 to +150

°C

stg

ELECTRICAL CHARACTERISTICS (at T_amb= 25°C)

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS

I =-100µA

Collector-base breakdown boltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-500

-5

(BR)CBO

I =-10mA*

BR(CEO)

(BR)EBO

I =-100µA

; I

-100

=-500V; V_CE=-500V

=-5V

CBO

EBO

CES

Emitter cut-off current

Collector-emitter saturation voltage

-0.2

-0.5

I =-20mA, I =-2mA*

C B

CE(sat)

I =-50mA, I =-10mA*

Base-emitter saturation voltage

Base-emitter turn on voltage

-0.9

I =-50mA, I =-10mA*

C B

BE(sat)

BE(on)

I =-50mA, V =-10V*

Static forward current transfer ratio

100

300

I =-1mA, V =-10V

C CE

I =-50mA, V =-10V*

C CE

15 typ

I =-100mA, V

=-10V*

Transition frequency

MHz

=-20V, I =-10mA,

CE C

f=50MHz

Output capacitance

Switching times

=-20V, f=1MHz

obo

110 typ.

1.5 typ.

␮s

=-100V, I =-50mA,

off

=-5mA, I =10mA

* Measured under pulsed conditions. Pulse width=300␮s. Duty cycle Յ2%

ISSUE 1 - DECEMBER 2005

SEMICONDUCTORS

12 3

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