Datasheet > ZTX558STZ

ZTX558STZ

更新时间： 2024-02-06 11:48:06

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ZTX558STZ 数据手册

PNP SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 1 APRIL 94

ZTX558

FEATURES

400 Volt V_CEO

200mA continuous current

P_tot= 1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

-400

Collector-Emitter Voltage

Emitter-Base Voltage

-400

-5

-200

Continuous Collector Current

Power Dissipation

P_tot

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO-400

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=-100µA

Collector-Emitter

Breakdown Voltage

V_BR(CEO)

-400

-5

I_C=-10mA*

Emitter-Base Breakdown V_(BR)EBO

Voltage

I_E=-100µA

Collector Cut-Off Current I_CBO

Collector Cut-Off Current I_CES

-100

V_CB=-320V

V_CE=-320V

V_EB=-4V

Emitter Cut-Off Current

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.2

-0.5

I_C=-20mA, I_B=-2mA

I_C=-50mA, I_B=-6mA

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-0.9

I_C=-50mA, I_B=-5mA

Base-Emitter

Turn On Voltage

-0.9

IC=-50mA, V_CE=-10V

Static Forward Current

Transfer Ratio

100

I_C=-1mA, V_CE=-10V

I_C=-50mA, V_CE=-10V

I_C=-100mA, V_CE=-10V*

300

Transition

Frequency

f_T

MHz

I_C=-10mA, V_CE=-20V

f=20MHz

Collector-Base

Breakdown Voltage

C_obo

V_CB=-20V, f=1MHz

Switching times

t_on

t_off

1600

I_C=-50mA, V_C=-100V

I_B1=5mA, I_B2=-10mA

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3-202

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