PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
ZTX558
FEATURES
*
*
*
400 Volt VCEO
200mA continuous current
Ptot= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
-400
Collector-Emitter Voltage
Emitter-Base Voltage
-400
V
-5
-200
V
Continuous Collector Current
Power Dissipation
mA
W
Ptot
1
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
V(BR)CBO -400
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VBR(CEO)
-400
-5
IC=-10mA*
Emitter-Base Breakdown V(BR)EBO
Voltage
IE=-100µA
Collector Cut-Off Current ICBO
Collector Cut-Off Current ICES
-100
-100
-100
nA
nA
nA
VCB=-320V
VCE=-320V
VEB=-4V
Emitter Cut-Off Current
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2
-0.5
V
V
IC=-20mA, IB=-2mA
IC=-50mA, IB=-6mA
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.9
V
IC=-50mA, IB=-5mA
Base-Emitter
Turn On Voltage
-0.9
V
IC=-50mA, VCE=-10V
Static Forward Current
Transfer Ratio
100
100
15
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V
IC=-100mA, VCE=-10V*
300
5
Transition
Frequency
fT
50
MHz
pF
IC=-10mA, VCE=-20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo
VCB=-20V, f=1MHz
Switching times
ton
toff
95
1600
ns
ns
IC=-50mA, VC=-100V
IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-202