ZTX550Q

更新时间： 2023-09-24 09:17:40

品牌	Logo	应用领域
美台 - DIODES		开关小信号双极晶体管
页数	文件大小	规格书
2页	89K
描述
PNP, 45V, 1A, E-Line

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中文翻译

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数据手册

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ZTX550Q 数据手册

PNP SILICON PLANAR

ZTX550

ZTX551

MEDIUM POWER TRANSISTORS

ISSUE 1 MARCH 94

FEATURES

60 Volt V_CEO

1 Amp continuous current

P_tot= 1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

ZTX550 ZTX551

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-45

-80

-60

-5

-2

-1

Peak Pulse Current

Continuous Collector Current

I_C

Power Dissipation: at T_amb=25°C

derate above 25°C

P_tot

5.7

mW/ °C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL

ZTX550

ZTX551

UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V_(BR)CBO

-60

-80

-60

-5

I_C=-100µA

I_C=-10mA*

I_E=-100µA

Collector-Emitter

Sustaining Voltage

V_CEO(sus)-45

Emitter-Base

Breakdown Voltage

V_(BR)EBO

I_CBO

-5

Collector Cut-Off

Current

-0.1

_CB=-45V

_CB=-60V

µA

-0.1

Emitter Cut-Off

Current

I_EBO

-0.1

V_EB=-4V

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.25

-0.35

I_C=-150mA,

I_B=-15mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

h_FE

-1.1

300

-1.1

150

I_C=-150mA,

I_B=-15mA*

Static Forward

Current Transfer

Ratio

100

I_C=-150mA,

V_CE=-10V*

I_C=-1A, V_CE=-10V*

Transition

Frequency

f_T

150

MHz I_C=-50mA, V_CE=-10V

f=100MHz

3-194

中文翻译

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