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ZTX458 PDF预览

ZTX458

更新时间: 2024-10-31 14:54:19
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
2页 57K
描述
NPN, 400V, 0.3A, E-Line

ZTX458 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:IN-LINE, R-PSIP-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:15 weeks
风险等级:0.71最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PSIP-W3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

ZTX458 数据手册

 浏览型号ZTX458的Datasheet PDF文件第2页 
NPN SILICON PLANAR MEDIUM POWER  
HIGH VOLTAGE TRANSISTOR  
ISSUE 2 – MARCH 1994  
ZTX458  
FEATURES  
*
*
*
400 Volt VCEO  
0.5 Amp continuous current  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
400  
Collector-Emitter Voltage  
400  
V
Emitter-Base Voltage  
5
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
300  
1
mA  
W
Ptot  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 400  
TYP.  
MAX. UNIT  
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=320V  
VCE=320V  
VEB=4V  
Collector-Emitter  
Breakdown Voltage  
VCEO(sus) 400  
V
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
5
V
Collector Cut-Off  
Current  
100  
100  
100  
nA  
nA  
nA  
Collector Cut-Off  
Current  
ICES  
Emitter Cut-Off Current IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
0.2  
0.5  
V
V
IC=20mA, IB=2mA  
IC=50mA, IB=6mA  
Base-Emitter  
Saturation Voltage  
0.9  
V
IC=50mA, IB=5mA  
Base-Emitter  
Turn On Voltage  
0.9  
V
IC=50mA, VCE=10V  
Static Forward Current hFE  
Transfer Ratio  
100  
100  
15  
IC=1mA, VCE=10V  
IC=50mA, VCE=10V  
IC=100mA, VCE=10V*  
300  
Transition Frequency  
fT  
50  
MHz  
pF  
IC=10mA, VCE=20V  
f=20MHz  
Collector-Base  
Breakdown Voltage  
Cobo  
5
VCB=20V, f=1MHz  
3-182  

ZTX458 替代型号

型号 品牌 替代类型 描述 数据表
ZTX458STZ DIODES

完全替代

Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX749STZ DIODES

类似代替

Small Signal Bipolar Transistor, 2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COM
ZTX690B DIODES

功能相似

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX458STOA DIODES

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Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX458STOA ZETEX

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Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
ZTX458STOB ZETEX

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Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92