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ZTX327

更新时间: 2024-10-31 22:34:03
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管射频小信号双极晶体管局域网
页数 文件大小 规格书
1页 52K
描述
NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR

ZTX327 技术参数

是否Rohs认证:不符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-W3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.08Is Samacsys:N
最大集电极电流 (IC):0.4 A基于收集器的最大容量:3 pF
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):15最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PSIP-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
最小功率增益 (Gp):8.5 dB认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):500 MHz
VCEsat-Max:1 VBase Number Matches:1

ZTX327 数据手册

  
NPN SILICON PLANAR R.F.  
ZTX327  
MEDIUM POWER TRANSISTOR  
ISSUE 2 – MARCH 94  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VALUE  
UNIT  
V
Collector-Base Voltage  
55  
Collector-Emitter Voltage  
VCEO  
VCER  
30  
55  
V
V
Emitter-Base Voltage  
VEBO  
IC  
3.5  
400  
V
mA  
W
Continuous Collector Current  
Power Dissipation  
Ptot  
1.5  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +175  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
55  
V
IC=100µA, IE=0  
Collector-Emitter  
Sustaining Voltage  
V(BR)CEO(sus)  
30  
V
IC=5mA, IB=0  
V(BR)CER(sus)  
V(BR)EBO  
55  
IC=5mA, RBE=10Ω  
IE=100µA,IC=0  
Emitter-Base  
Breakdown Voltage  
3.5  
V
Collector-Emitter  
Cut-Off Current  
ICEO  
VCE(SAT)  
hFE  
20  
VCB=45V  
µA  
V
Collector-Emitter  
Saturation Voltage  
1.0  
IC=100mA, IB.=20mA  
IC=50mA, VCE=5V  
Static Forward  
Current Transfer  
15  
Transitional  
Frequency  
fT  
500  
800  
MHz IC=25mA, VCE=15V  
f=100MHz  
Output Capacitance Cobo  
3.0  
pF  
VCE=15V, IC=25mA  
f=100MHz  
R.F. power output  
Efficiency  
POUT  
350  
50  
440  
70  
mW  
%
VCC=12V, PIN=80mW  
f=400MHz  
η
PAGE NO  

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