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ZTX325STZ PDF预览

ZTX325STZ

更新时间: 2024-11-25 21:06:27
品牌 Logo 应用领域
捷特科 - ZETEX 放大器晶体管
页数 文件大小 规格书
2页 63K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX325STZ 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TO-92 COMPATIBLE, E-LINE PACKAGE-3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.06最大集电极电流 (IC):0.05 A
基于收集器的最大容量:0.85 pF集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PSIP-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1300 MHzBase Number Matches:1

ZTX325STZ 数据手册

 浏览型号ZTX325STZ的Datasheet PDF文件第2页 
NPN SILICON PLANAR  
RF TRANSISTOR  
ISSUE 2 – MARCH 94  
ZTX325  
FEATURES  
*
*
*
High fT, 1.3GHz  
Low noise < 5dB at 500MHz  
Power output at 500MHz >175mW  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IAV  
VALUE  
UNIT  
V
Collector-Base Voltage  
30  
Collector-Emitter Voltage  
15  
2.5  
V
Emitter-Base Voltage  
V
25  
mA  
mA  
mW  
°C  
Mean Collector Current (Averaged over 100µs)  
Collector Current  
ICM  
50  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
350  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Emitter  
Sustaining Voltage  
VCEO(SUS) 15  
V
V
IC=10mA, IB=0  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
5
IE=10µA, IC=0  
Collector Cut-Off Current ICBO  
10  
10  
nA  
VCB=15V, IE=0  
Emitter Cut-Off Current  
ICES  
hFE  
VCE=15V, VBE=0  
µA  
Static Forward Current  
Transfer Ratio  
25  
20  
150  
125  
IC=2mA, VCE=1V*  
IC=25mA, VCE=1V*  
Transition Frequency  
fT  
1.0  
1.3  
GHz  
GHz  
IC=2mA, VCE=5V, f=400MHz  
IC=25mA, VCE=5V, f=400MHz  
Capacitance, Collector  
Depletion Layer  
CTC  
CTE  
-Cre  
1.5  
2.0  
pF  
pF  
VCB=10V, IE=Ie=0, f=1MHz  
VEB=0.5V, IC=Ic=0, f=1MHz  
Capacitance, Emitter  
Depletion Layer  
Feedback Capacitance  
0.85  
pF  
ps  
VCE=5V, IC=2mA, f=1MHz  
Feedback Time Constant rbb’Cb’c  
2.0  
12  
VCB=5V, -IE=2mA, f=10.7MHz  
3-161  

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