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ZTX300STOA PDF预览

ZTX300STOA

更新时间: 2024-11-25 13:16:15
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
2页 51K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX300STOA 技术参数

生命周期:Transferred包装说明:IN-LINE, R-PSIP-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.19
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PSIP-W3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:WIRE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.35 V
Base Number Matches:1

ZTX300STOA 数据手册

 浏览型号ZTX300STOA的Datasheet PDF文件第2页 
NPN SILICON PLANAR  
ZTX300  
SMALL SIGNAL TRANSISTOR  
ISSUE 2 – MARCH 94  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
25  
Collector-Emitter Voltage  
25  
5
V
Emitter-Base Voltage  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
500  
mA  
mW  
°C  
Ptot  
300  
Tj:Tstg  
-55 to +175  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 25  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
IC=10µA, IE=0  
IC=5mA, IB=0  
IE=10µA, IC=0  
Collector-Emitter  
Sustaining Voltage  
VCEO(sus) 25  
V
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
5
V
Collector Cut-Off  
Current  
0.2  
VCB=25V, IE=0  
µA  
Emitter Cut-Off Current IEBO  
0.2  
VEB=4V, IC=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.35  
V
IC=50mA, IB=5mA*  
IC=10mA, IB=1mA*  
IC=10mA, VCE=6V*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
0.65  
50  
1.0  
V
Static Forward Current hFE  
Transfer Ratio  
300  
Transition  
Frequency  
fT  
150  
MHz  
pF  
IC=10mA, VCE=6V  
f=100MHz  
Output Capacitance  
Cobo  
N
6
VCB=6V, IE=0  
f=1MHz  
Noise Figure  
7
dB  
VCE=6V, f=1KHz  
RS=1500, IC=100µA  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-156  

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