Datasheet > ZTE5.1-TAP

ZTE5.1-TAP

更新时间： 2025-07-11 07:34:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	145K
描述
Zener Diode, 5.1V V(Z), 5.88%, 0.3W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2

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ZTE5.1-TAP 数据手册

ZTE Series

Vishay Semiconductors

VISHAY

Voltage Stabilizers

Features

• Silicon Stabilizer Diodes

• Monolithic integrated analog circuits designed for

small power stabilizer and limitation circuits, pro-

viding low dynamic resistance and high-quality

stabilization performance as well as low noise. In

the reverse direction, these devices show the

behavior of forward-biased silicon diodes.

94 9367

• The end of the ZTE device marked with the cath-

ode ring is to be connected: ZTE1.5 and ZTE2 to

the negative pole of the supply voltage; ZTE2.4

thru ZTE5.1 to the positive pole of the supply volt-

age.

Mechanical Data

Case: DO-35 Glass Case

Weight: approx. 0.13 g

Packaging codes/options:

TR / 10k per 13 " reel (52 mm tape), 30k/box

TAP / 10k per Ammo tape, (52 mm tape), 30k/box

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

100

Unit

Operating Current (see Table

"Characteristics")

Inverse Current

Power dissipation

tot

300

Junction temperature

Storage temperature range

150

°C

- 55 to + 150

(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Part

Symbol

Min

Typ.

Value

Unit

-4

Temperature Coefficient of the

stabilized voltage

I = 5 mA

ZTE1.5

- 26

10 /°C

-4

ZTE2

ZTE2.4

ZTE5.1

- 26

- 34

θJA

10 /°C

-4

10 /°C

-4

10 /°C

Thermal resistance junction to

ambient air

°C/W

400

(1) Valid provided that electrodes are kept at ambient temperature at a distance of 8 mm from case

Document Number 85813

Rev. 1.4, 27-Nov-03

www.vishay.com

12 3 4 5 6

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