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ZTE4.7-TAP PDF预览

ZTE4.7-TAP

更新时间: 2024-09-23 13:16:15
品牌 Logo 应用领域
威世 - VISHAY 稳压器二极管齐纳二极管
页数 文件大小 规格书
4页 102K
描述
Zener Diode, 4.7V V(Z), 6.38%, 0.3W, Silicon, Unidirectional, DO-35, GLASS PACKAGE-2

ZTE4.7-TAP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-35包装说明:GLASS PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.84其他特性:LOW NOISE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
认证状态:Not Qualified标称参考电压:4.7 V
表面贴装:NO技术:ZENER
端子面层:TIN SILVER端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:6.38%工作测试电流:5 mA
Base Number Matches:1

ZTE4.7-TAP 数据手册

 浏览型号ZTE4.7-TAP的Datasheet PDF文件第2页浏览型号ZTE4.7-TAP的Datasheet PDF文件第3页浏览型号ZTE4.7-TAP的Datasheet PDF文件第4页 
ZTE1.5 thru ZTE5.1  
Vishay Semiconductors  
formerly General Semiconductor  
Voltage Stabilizers  
DO-204AH (DO-35 Glass)  
Features  
• Silicon Stabilizer Diodes  
• Monolithic integrated analog circuits designed for  
small power stabilizer and limitation circuits,  
providing low dynamic resistance and high-quality  
stabilization performance as well as low noise. In the  
reverse direction, these devices show the behavior of  
forward-biased silicon diodes.  
• The end of the ZTE device marked with the cathode ring  
is to be connected: ZTE1.5 and ZTE2 to the negative  
pole of the supply voltage; ZTE2.4 thru ZTE5.1 to the  
positive pole of the supply voltage.  
• These diodes are also available in MiniMELF case with  
the type designation LL1.5 … LL 5.1.  
max.  
.079 (2.0)  
Cathode  
Mark  
Dimensions are in inches  
and (millimeters)  
Mechanical Data  
Case: DO-35 Glass Case  
Weight: approx. 0.13g  
Packaging codes/options:  
max. .020 (0.52)  
D7/10K per 13” reel (52mm tape), 20K/box  
D8/10K per Ammo tape, (52mm tape), 20K/box  
Maximum Ratings (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Operating Current (see Table “Characteristics”)  
Inverse Current  
IF  
Ptot  
TJ  
100  
300(1)  
mA  
mW  
°C  
Power dissipation at Tamb = 25°C  
Junction temperature  
150  
Storage temperature range  
TS  
55 to +150  
°C  
Electrical and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Forward Voltage at IF = 10 mA  
VF  
1.1  
V
Temperature Coefficient of the  
stabilized voltage at IZ = 5 mA  
ZTE1.5, ZTE2  
ZTE2.4, ZTE5.1  
αVZ  
αVZ  
–26  
–34  
10–4/°C  
10–4/°C  
Thermal resistance junction to ambient air  
RθJA  
400(1)  
°C/W  
Document Number 88425  
02-May-02  
www.vishay.com  
1

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