ZP800- RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
600-1600V
RRM
****************************************************************************************************************************************
GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
Features:
ZT30aT
. All diffused structure
. High surge rating
. Blocking capability up to 1600 volts
. Ceramic housing hermetic package
. Pressure assembled device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
Device Type
ZP800-06
ZP800-08
ZP800-10
ZP800-12
ZP800-14
ZP800-16
All ratings are specified for Tj=25 oC, unless otherwise stated
.
V
(1)
V
(1)
RRM
RSM
800
600
800
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +175 oC.
1000
1200
1400
1600
1800
1000
1200
1400
1600
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 175 oC.
(4) See parameter definition below :
i
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
IFM
di/dt
trr
0.25 I
R
Repetitive peak reverse
leakage current
2 mA
30 mA (3)
IRRM
Qrr
I
RM(REC)
REVERSE RECOVERY CHARACTERIST
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
800
Typ.
Units Conditions
Sinewave 180o, Tc =100℃
Average forward current
RMS forward current
A
A
1250
Nominal value
10 msec (50Hz), sinusoidal wave-
Peak one cycle surge
(non repetitive) current
IFSM
8800
38×104
1.30
A
shape, 180o conduction, Tj = 175 ℃
I square t
I2t
VFM
VFO
rF
A2s
V
10 msec
Peak forward voltage
Threshold voltage
IFM= 1500A;Tj =25oC
Tj=175oC,I=0.5πIF(AV) to 1.5πIF(AV)
Tj=175oC,I=0.5πIF(AV) to 1.5πIF(AV)
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
0.8
V
Slope resistance
0.28
mΩ
A
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
IRM(REC)
Qrr
2000
μC
μs
trr
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