ZP700- RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
2500-3500V
RRM
****************************************************************************************************************************************
GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
Features:
ZT30aT
. All diffused structure
. High surge rating
. Blocking capability up to 3500 volts
. Ceramic housing hermetic package
. Pressure assembled device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
Device Type
ZP700-25
ZP700-26
ZP700-28
ZP700-30
ZP700-32
ZP700-35
All ratings are specified for Tj=25 oC, unless otherwise stated
.
V
(1)
V
(1)
RRM
RSM
2500
2600
2800
3000
3200
3500
2700
2800
3000
3200
3400
3700
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +175 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 175 oC.
(4) See parameter definition below :
i
IFM
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
di/dt
trr
0.25 I
R
Qrr
Repetitive peak reverse
leakage current
2 mA
30 mA (3)
I
RM(REC)
IRRM
REVERSE RECOVERY CHARACTERIST
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
700
Typ.
Units Conditions
Sinewave 180o, Tc =100℃
Average forward current
RMS forward current
A
A
1099
Nominal value
10 msec (50Hz), sinusoidal wave-
Peak one cycle surge
(non repetitive) current
IFSM
9800
48×104
1.95
A
shape, 180o conduction, Tj = 175 ℃
I square t
I2t
VFM
VFO
rF
A2s
V
10 msec
Peak forward voltage
Threshold voltage
IFM= 1500A;Tj =25oC
Tj=175oC,I=0.5πIF(AV) to 1.5πIF(AV)
Tj=175oC,I=0.5πIF(AV) to 1.5πIF(AV)
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
0.88
V
Slope resistance
0.50
mΩ
A
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
IRM(REC)
Qrr
2000
μC
μs
trr
http://www.chinarunau.com
Page 1 of 2