Datasheet > ZP640-36

ZP640-36

更新时间： 2024-11-06 15:18:31

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	208K
描述
D5C

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数据手册

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ZP640-36 数据手册

ZP640- RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

3600-4500V

RRM

****************************************************************************************************************************************

GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER

Features:

ZT40cT

. All diffused structure

. High surge rating

. Blocking capability up to 4500 volts

. Ceramic housing hermetic package

. Pressure assembled device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

Device Type

ZP640-36

ZP640-38

ZP640-40

ZP640-45

All ratings are specified for Tj=25 ^oC, unless otherwise stated

(1)

RRM

RSM

3600

3800

4000

4500

3800

4000

4200

4700

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +150 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 150 ^oC.

(4) See parameter definition below :

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

IFM

di/dt

Repetitive peak reverse

leakage current

2 mA

50 mA (3)

I_RRM

trr

0.25 I

Qrr

RM(REC)

Conducting - on state

REVERSE RECOVERY CHARACTERIST

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

640

Typ.

Units Conditions

Sinewave 180^o, Tc =100℃

Average value of on-state current

RMS value of on-state current

1004

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

9600

46×10⁴

1.9

shape, 180^oconduction, Tj = 150 ℃

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak on-state voltage

Threshold voltage

I_FM= 1500A;Tj =25^oC

Tj=150^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

0.94

Slope resistance

0.5

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

Q_rr

3000

μC

μs

t_rr

http://www.chinarunau.com

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