Datasheet > ZP600A200-1000V ※Y35ZPB

ZP600A200-1000V ※Y35ZPB

更新时间： 2024-11-18 07:08:07

品牌	Logo	应用领域
柳晶 - LIUJING		可控硅
页数	文件大小	规格书
3页	547K
描述
可控硅、晶闸管

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中文翻译

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数据手册

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ZP600A200-1000V ※Y35ZPB 数据手册

ZP600A200~1000V

Y35ZPB

国标型普通整流管平板式

(

)

Chinese Type Rectiﬁer Diodes (Capsule Version)

Liujing rectifier co., Ltd.

FEATURES

1). Low forward voltage drop

2). High reverse voltage

3). Hermetic metal cases with ceramic insulators

TYPICAL APPLICATIONS

1). All purpose high power rectiﬁer diodes

2). High power resistance welding equipment

3). Non-controllable and half-controllable

I_T(RMS)

1857 A

V_DRM/V_RRM200~1000

I_TSM

I²t

17 KA

1445 10³A²S

rectiﬁers

4). Controlled rectiﬁers

THE MAIN PARAMETERS

VALUE

℃

SYMBOL

I_F(AV)

CHARACTERISTIC

TEST CONDITIONS

T_j(

)

UNIT

Min Type Max

℃

T_hs=55

1857

600

180 half sine wave 50Hz

Double side cooled,

Mean forward current

190

℃

T_hs=163

V_RRMtp=10ms, V_RSM= V_RRM+100V

V_RM= V_RRM

V_RRM

I_RRM

I_FSM

I²t

Repetitive peak reverse voltage

Repetitive peak current

Surge on-state current

I²T for fusing coordination

Threshold voltage

190

200

1000

10ms half sine wave, V_R=0.6V_RRM

190

1445 A²s*10³

V_FO

r_F

0.97

0.27

1.46

190

Forward slop resistance

Peak on-state voltage

Reverse recovery current

Reverse recovery time

Recovery charge

I_TM=1800A, F=15KN

V_FM

I_rm

I_TM=1000A, tp=1000 s, di/dt=-20A/

t_rr

190

4.2

s,V_R=50V

Q_rr

189

At 180 sine, double side cooled

Thermal resistance

Junction to heatsink

℃

R_th(j-h)

F_m

0.033

Clamping force 15.0KN

Mounting force

Stored temperature

Weight

℃

stg

-40

200

W_t

260

Size

Package box size

95 95 50

www.china-liujing.com

1 / 3

12 3

中文翻译

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