Datasheet > ZP6000-56*

ZP6000-56*

更新时间： 2024-11-06 15:18:43

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	208K
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D18D

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ZP6000-56* 数据手册

ZP6000-RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

4400-5600V_RRM

****************************************************************************************************************************************

HIGH POWER FREE FLOATING TYPE RECTIFIER DIODE

Features:

ZT135dT

. Free-floating silicon technology

. Low on-state and switching losses

. Blocking capability up to 5600 volts

. Optimum power handling capability

. Pressure assembled device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

All ratings are specified for Tj=25 ^oC, unless otherwise stated

(1)

Device Type

ZP6000-44

ZP6000-48

ZP6000-52

ZP6000-56

RRM

RSM

4400

4800

5200

5600

4600

5000

5400

5800

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +150 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 150 ^oC.

(4) See parameter definition below :

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

IFM

di/dt

trr

Repetitive peak reverse

leakage current

5 mA

200 mA (3)

I_RRM

0.25 I

Qrr

IRM(REC)

REVERSE RECOVERY CHARACTERIST

Conducting - on state

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

6000

9420

Typ.

Units Conditions

Sinewave 180^o, Tc =85℃

Average forward current

RMS forward current

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

94000

4.5×10⁷

1.20

shape, 180^oconduction, Tj = 150 ℃

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak forward voltage

Threshold voltage

I_FM= 5000A;Tj =25^oC

Tj=150^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

0.790

Slope resistance

0.070

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

Q_rr

μC

μs

t_rr

http://www.chinarunau.com

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