Datasheet > ZP600-68*

ZP600-68*

更新时间： 2024-09-17 15:18:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	209K
描述
D8D

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数据手册

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ZP600-68* 数据手册

ZP600-RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

6800-8500V_RRM

****************************************************************************************************************************************

HIGH POWER FREE FLOATING TYPE RECTIFIER DIODE

Features:

ZT55dT

. All diffused structure

. High surge rating

. Blocking capability up to 8500 volts

. Ceramic housing hermetic package

. Pressure assembled device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

All ratings are specified for Tj=25 ^oC, unless otherwise stated

(1)

Device Type

ZP600-68

ZP600-70

ZP600-76

ZP600-80

ZP600-85

RRM

RSM

6800

7000

7600

8000

8500

7000

7200

7800

8200

8700

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +125 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 ^oC.

(4) See parameter definition below :

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

IFM

di/dt

trr

Repetitive peak reverse

leakage current

5 mA

70 mA (3)

0.25 I

I_RRM

Qrr

RM(REC)

REVERSE RECOVERY CHARACTERIST

Conducting - on state

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

600

Typ.

Units Conditions

Sinewave 180^o, Tc =70℃

Average forward current

RMS forward current

942

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

8400

3.6×10⁵

1.65

shape, 180^oconduction, Tj = 125 ℃

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak forward voltage

Threshold voltage

I_FM= 1000A;Tj =25^oC

Tj=125^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

1.12

Slope resistance

0.42

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

Q_rr

μC

μs

t_rr

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