ZP4500-RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
6800-8500VRRM
****************************************************************************************************************************************
HIGH POWER FREE FLOATING TYPE RECTIFIER DIODE
Features:
ZT135dT
. All diffused structure
. High surge rating
. Blocking capability up to 8500 volts
. Ceramic housing hermetic package
. Pressure assembled device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
All ratings are specified for Tj=25 oC, unless otherwise stated
.
V
(1)
V
(1)
Device Type
ZP4500-68
ZP4500-70
ZP4500-76
ZP4500-80
ZP4500-85
RRM
RSM
6800
7000
7600
8000
8500
7000
7200
7800
8200
8700
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +125 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 125 oC.
(4) See parameter definition below :
i
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
IFM
di/dt
trr
Repetitive peak reverse
leakage current
5 mA
200 mA (3)
0.25 I
R
IRRM
Qrr
I
RM(REC)
REVERSE RECOVERY CHARACTERIST
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
4500
7065
Typ.
Units Conditions
Sinewave 180o, Tc =70℃
Average forward current
RMS forward current
A
A
Nominal value
10 msec (50Hz), sinusoidal wave-
Peak one cycle surge
(non repetitive) current
IFSM
44000
1.4×107
1.65
A
shape, 180o conduction, Tj = 125 ℃
I square t
I2t
VFM
VFO
rF
A2s
V
10 msec
Peak forward voltage
Threshold voltage
IFM= 5000A;Tj =25oC
Tj=125oC,I=0.5πIF(AV) to 1.5πIF(AV)
Tj=125oC,I=0.5πIF(AV) to 1.5πIF(AV)
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
0.95
V
Slope resistance
0.13
mΩ
A
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
IRM(REC)
Qrr
μC
μs
trr
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