ZP2500- RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
600-1600V
RRM
****************************************************************************************************************************************
GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
Features:
ZT55cT
. All Diffused Structure
. High Surge rating
. Blocking capability up to 1600 volts
. Ceramic Housing Hermetic Package
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
Device Type
ZP2500-06
ZP2500-08
ZP2500-10
ZP2500-12
ZP2500-14
ZP2500-16
All ratings are specified for Tj=25 oC unless
otherwise stated.
V
(1)
V
(1)
RRM
RSM
800
600
800
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +175 oC.
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 175 oC.
(4) See parameter definition below :
1000
1200
1400
1600
1800
1000
1200
1400
1600
i
IFM
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
di/dt
trr
0.25 I
R
Qrr
Repetitive peak
reverse leakage
5 mA
60 mA (3)
I
RM(REC)
IRRM
REVERSE RECOVERY CHARACTERIST
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
2500
3925
Typ.
Units Conditions
Sinewave, 180o , Tc =100℃
Average forward current
RMS forward current
A
A
Nominal value
10 msec (50Hz), sinusoidal wave-
Peak one cycle surge
(non repetitive) current
IFSM
27500
3.8×106
1.35
A
shape, 180o conduction, Tj = 175 ℃
I square t
I2t
VFM
VFO
rF
A2s
V
10 msec
Peak forward voltage
Threshold voltage
IFM= 3000A;Tj =25oC
Tj=175oC,I=0.5πIF(AV) to 1.5πIF(AV)
Tj=175oC,I=0.5πIF(AV) to 1.5πIF(AV)
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
0.78
V
Slope resistance
0.094
mΩ
A
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
IRM(REC)
Qrr
4000
μC
μs
trr
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