ZP2400- RECTIFIER DIODE
Jiangsu Yangjie Runau Semiconductor Co.,Ltd
5400-6500V
RRM
****************************************************************************************************************************************
GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER
Features:
ZT95cT
. All Diffused Structure
. High Surge rating
. Blocking capability up to 6500 volts
. Ceramic Housing Hermetic Package
. Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Reverse Blocking
Notes:
Device Type
ZP2400-54
ZP2400-56
ZP2400-58
ZP2400-60
ZP2400-65
All ratings are specified for Tj=25 oC unless otherwise stated.
(1) All voltage ratings are specified for an applied
50Hz/60zHz sinusoidal waveform over the
temperature range 0 to +150oC.
V
(1)
V
(1)
RRM
RSM
5400
5600
5800
6000
6500
5600
5800
6000
6200
6700
(2) 10 msec. max. pulse width
(3) Maximum value for Tj = 150oC.
(4) See parameter definition below:
i
VRRM = Repetitive peak reverse voltage
VRSM = Non repetitive peak reverse voltage (2)
IFM
di/dt
trr
0.25 I
R
Repetitive peak
reverse leakage
5 mA
200 mA (3)
Qrr
I
RM(REC)
IRRM
REVERSE RECOVERY CHARACTERIST
Conducting - on state
Parameter
Symbol
IF(AV)
IFRMS
Min.
Max.
2400
3768
Typ.
Units Conditions
Sinewave, 180o , Tc =100℃
Average value of on-state current
RMS value of on-state current
A
A
Nominal value
10 msec (50Hz), sinusoidal wave-
Peak one cycle surge
(non repetitive) current
IFSM
36000
6.5×106
1.55
A
shape, 180o conduction, Tj = 150 ℃
I square t
I2t
VFM
VFO
rF
A2s
V
10 msec
Peak on-state voltage
Threshold voltage
IFM= 5000A;Tj =25oC
Tj=150oC,I=0.5πIF(AV) to 1.5πIF(AV)
Tj=150oC,I=0.5πIF(AV) to 1.5πIF(AV)
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
IFM = 500 A; di/dt = -10 A/s;Tjmax
0.95
V
Slope resistance
0.11
mΩ
A
Reverse Recovery Current (4)
Reverse Recovery Charge (4)
Reverse Recovery Time (4)
IRM(REC)
Qrr
7000
μC
μs
trr
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