Datasheet > ZP2200-68*

ZP2200-68*

更新时间： 2024-03-03 10:08:34

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	208K
描述
D15D

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ZP2200-68* 数据手册

ZP2200-RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

6800-8500V_RRM

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HIGH POWER FREE FLOATING TYPE RECTIFIER DIODE

Features:

ZT95dT

. All diffused structure

. High surge rating

. Blocking capability up to 8500 volts

. Ceramic housing hermetic package

. Pressure assembled device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

All ratings are specified for Tj=25 ^oC, unless otherwise stated

(1)

Device Type

ZP2200-68

ZP2200-70

ZP2200-76

ZP2200-80

ZP2200-85

RRM

RSM

6800

7000

7600

8000

8500

7000

7200

7800

8200

8700

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +125 ^oC.

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 125 ^oC.

(4) See parameter definition below :

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

IFM

di/dt

trr

0.25 I

Repetitive peak reverse

leakage current

5 mA

200 mA (3)

I_RRM

Qrr

RM(REC)

REVERSE RECOVERY CHARACTERIST

Conducting - on state

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

2200

3454

Typ.

Units Conditions

Sinewave 180^o, Tc =70℃

Average forward current

RMS forward current

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

42000

9.0×10⁶

1.70

shape, 180^oconduction, Tj = 125 ℃

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak forward voltage

Threshold voltage

I_FM= 3000A;Tj =25^oC

Tj=125^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

1.07

Slope resistance

0.21

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

Q_rr

μC

μs

t_rr

http://www.chinarunau.com

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