Datasheet > ZP2100-50

ZP2100-50

更新时间： 2024-03-03 10:10:58

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
2页	207K
描述
D13C

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ZP2100-50 数据手册

ZP2100- RECTIFIER DIODE

Jiangsu Yangjie Runau Semiconductor Co.,Ltd

4600-5200V

RRM

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GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER

Features:

ZT80cT

. All Diffused Structure

. High Surge rating

. Blocking capability up to 5200 volts

. Ceramic Housing Hermetic Package

. Pressure Assembled Device

ELECTRICAL CHARACTERISTICS AND RATINGS

Reverse Blocking

Notes:

Device Type

ZP2100-46

ZP2100-48

ZP2100-50

ZP2100-52

All ratings are specified for Tj=25 ^oC unless otherwise stated.

(1) All voltage ratings are specified for an applied

50Hz/60zHz sinusoidal waveform over the

temperature range 0 to +150 ^oC.

(1)

RRM

RSM

4600

4800

5000

5200

4800

5000

5200

5400

(2) 10 msec. max. pulse width

(3) Maximum value for Tj = 150 ^oC.

(4) See parameter definition below:

V_RRM= Repetitive peak reverse voltage

V_RSM= Non repetitive peak reverse voltage (2)

IFM

di/dt

Repetitive peak

reverse leakage

5 mA

100 mA (3)

trr

I_RRM

0.25 I

Qrr

RM(REC)

Conducting - on state

REVERSE RECOVERY CHARACTERIST

Parameter

Symbol

I_F(AV)

I_FRMS

Min.

Max.

2100

3297

Typ.

Units Conditions

Sinewave, 180^o, Tc =100℃

Average forward current

RMS forward current

Nominal value

10 msec (50Hz), sinusoidal wave-

Peak one cycle surge

(non repetitive) current

I_FSM

31500

5×10⁶

1.60

shape, 180^oconduction, Tj = 150 ℃

I square t

I²t

V_FM

V_FO

r_F

A²s

10 msec

Peak forward voltage

Threshold voltage

I_FM= 3000A;Tj =25^oC

Tj=150^oC,I=0.5πI_F(AV)to 1.5πI_F(AV)

I_FM= 500 A; di/dt = -10 A/s;Tj_max

0.90

Slope resistance

0.15

mΩ

Reverse Recovery Current (4)

Reverse Recovery Charge (4)

Reverse Recovery Time (4)

I_RM(REC)

Q_rr

6000

μC

μs

t_rr

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